收藏本站
NOT RECOMMENDED FOR NEW DESIGN
USE DMP56D0UFB
DMP57D5UFB
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
?
?
?
?
?
?
?
?
?
Low On-Resistance:
R DS(ON) ≤ 6 ? @ V GS = -4.0V
R DS(ON) ≤ 8 ? @ V GS = -2.5V
Very Low Gate Threshold Voltage, ≤ 1.0V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate, 1KV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
?
?
?
?
?
?
Case: DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ? NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.001 grams (approximate)
Drain
DFN1006-3
D
S
Gate
Gate
Body
Diode
G
Protection
Diode
Source
ESD PROTECTED TO 1kV
Bottom View
Top View
Equivalent Circuit
Internal Schematic
Ordering Information (Note 3)
Part Number
DMP57D5UFB -7
DMP57D5UFB -7B
Marking
DP
DP
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3000
10,000
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMP57D5UFB -7
DMP57D5UFB -7B
DP
Top View
Dot Denotes
Drain Side
DMP57D5UFB
Document number: DS31274 Rev. 6 - 3
DP
Top View
Bar Denotes Gate
and Source Side
1 of 5
www.diodes.com
DP = Product Type Marking Code
December 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMP58D0LFB-7B MOSFET P-CH 50V 180MA 3-DFN
DMP58D0SV-7 MOSFET P-CH 50V 160MA SOT-563
DMS2120LFWB-7 MOSFET P-CH 20V 2.9A 8DFN
DMS2220LFDB-7 MOSFET P-CH 20V 3.5A 6-DFN
DMS2220LFW-7 MOSFET P-CH 20V 2.9A 8-DFN
DMS3012SFG-7 MOSFET N CH 30V POWERDI 3333-8
DMS3014SFG-7 MOSF N CH 30V 9.5A POWERDI3333-8
DMS3014SSS-13 MOSFET N-CH 30V 11A SO8
相关代理商/技术参数
DMP57D5UV 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
DMP57D5UV-7 功能描述:MOSFET 50V PMOS-DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP58D0LFB 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP58D0LFB-7 功能描述:MOSFET MOSFET BVDSS: 41V-60 X1-DFN1006-3 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP58D0LFB-7B 功能描述:MOSFET P-CH 50V 180MA 3-DFN RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
DMP58D0SV 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP58D0SV-7 功能描述:MOSFET PMOS-Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP6101A 功能描述:固态继电器-PCB安装 Input Mod., 5Vdc, 4-32Vdc In RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT